View STD16NE06L_155445.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
STD16NE06L
N - CHANNEL 60V - 0.07 - 16A - DPAK STripFETTM " POWER MOSFET
PRELIMINARY DATA
TYPE STD16NE06L
s s s s s
V DSS 60 V
R DS(on) < 0.085
ID 16 A
s
TYPICAL RDS(on) = 0.07 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES
3 1
DPAK TO-252
(Suffix "T4")
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (*) P tot dv/dt T stg Tj June 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 60 60 20 16 11 64 40 0.3 7 -65 to 175 175
(1) ISD 16 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/5
(*) Pulse width limited by safe operating area
STD16NE06L
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
3.75 100 1.5 275
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 35 V) Max Value 16 60 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V
T c =125 C
o
ON ()
Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10V V GS = 5V Test Conditions ID = 250 A ID = 8 A ID = 8 A 16 Min. 1 Typ. 1.7 0.07 0.06 Max. 2.5 0.085 0.07 Unit V A
ID(on)
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D =8 A V GS = 0 Min. 5 Typ. 9 800 125 50 1100 170 70 Max. Unit S pF pF pF
2/5
STD16NE06L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 30 V R G =4.7 V DD = 48 V I D = 10 A V GS = 5 V I D = 20 A VGS = 5 V Min. Typ. 20 45 14 8 4 Max. 30 60 20 Unit ns ns nC nC nC
SWITCHING OFF
Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 48 V I D = 20 A R G =4.7 V GS = 5 V Min. Typ. 10 25 42 Max. 14 34 60 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A I SD = 20 A V DD = 30 V VGS = 0 di/dt = 100 A/s o T j = 150 C 65 130 4 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
3/5
STD16NE06L
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A"
B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
4/5
STD16NE06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
5/5

▲Up To Search▲

Price & Availability of STD16NE06L

	To Download STD16NE06L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .